Parametric results for: JAN2N5302 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 9

9 hits Apply

Collector Current-Max (IC) (2)

15 A 2 30 A 7

Min (A) - Max (A)

9 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 9

9 hits Apply

Configuration (1)

SINGLE 9

9 hits Apply

DC Current Gain-Min (hFE) (2)

5.0 7 15.0 2

Min - Max

9 hits Apply

TO-204 2 TO-3 2

9 hits Apply

O-MBFM-P2 9

9 hits Apply

e0 4

9 hits Apply

Manufacturer (9)

Defense Logistics Agency 1 Harris Semiconductor 1 Intersil Corporation 1 Microchip Technology Inc 1 Microsemi Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New England Semiconductor 1 Silicon Transistor Corporation 1

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

2 9

9 hits Apply

175.0 °C 2

9 hits Apply

METAL 9

9 hits Apply

ROUND 9

9 hits Apply

FLANGE MOUNT 9

9 hits Apply

Active 2 Obsolete 4 Transferred 3

9 hits Apply

No 1

9 hits Apply

Polarity/Channel Type (1)

NPN 9

9 hits Apply

200 W 2

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply

Transition Frequency-Nom (fT) (1)

2 MHz 2

9 hits Apply