Parametric results for: JAN2N1714S under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 4

4 hits Apply

Collector Current-Max (IC) (1)

750 mA 4

4 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 4

4 hits Apply

O-MBCY-W3 4

4 hits Apply

e0 3

4 hits Apply

Manufacturer (4)

Defense Logistics Agency 1 Microchip Technology Inc 1 Microsemi Corporation 1 New England Semiconductor 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

175.0 °C 3

4 hits Apply

METAL 4

4 hits Apply

ROUND 4

4 hits Apply

CYLINDRICAL 4

4 hits Apply

Active 2 Obsolete 1 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

800 mW 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

16 MHz 3

4 hits Apply