Parametric results for: IRF9620SPBF under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

3 hits Apply

Drain Current-Max (ID) (2)

2.5 A 2 3.5 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

1.5 Ω 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-263AB 3

3 hits Apply

R-PSSO-G2 3

3 hits Apply

e3 1

3 hits Apply

Manufacturer (3)

International Rectifier 1 Vishay Intertechnologies 1 Vishay Siliconix 1

3 hits Apply

3 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 1 Transferred 2

3 hits Apply

Yes 2

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

40 W 1

3 hits Apply

40 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply