Parametric results for: IPB60R199CP under Power Field-Effect Transistors
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IPB60R199CPXT
Infineon Technologies AG
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$1.5900 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 16 A | 199 mΩ | 436 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 51 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | |||||||||||
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IPB60R199CPATMA1
Infineon Technologies AG
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$1.6179 | No | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 16 A | 199 mΩ | 436 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 51 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | D2PAK | 4 | Infineon | |||||
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IPB60R199CP
Infineon Technologies AG
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Check for Price | Yes | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 16 A | 199 mΩ | 436 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 139 W | 51 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 245 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | D2PAK | 4 | Infineon | ||
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IPB60R199CPAXT
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 16 A | 199 mΩ | 436 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 51 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | |||||||||||
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IPB60R199CPA
Infineon Technologies AG
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Check for Price | No | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 16 A | 199 mΩ | 436 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 51 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-263, 3 PIN | not_compliant | EAR99 | D2PAK | 4 | Infineon | ||||
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IPB60R199CPAATMA1
Infineon Technologies AG
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Check for Price | No | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 16 A | 199 mΩ | 436 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 51 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | D2PAK | 4 | |||||||
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IPB60R199CP
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 16 A | 199 mΩ | 436 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 51 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | COMMERCIAL | NOT SPECIFIED | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | GREEN, PLASTIC, TO-263, 3 PIN | unknown | D2PAK | 4 |