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DG212ETE-T
Maxim Integrated Products
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Check for Price Buy | No | No | Obsolete | 15 V | YES | -15 V | 175 Ω | 1 µs | 500 ns | SPST | CMOS | -18 V | -4.5 V | NO | 1 | 4 | 70 dB | SEPARATE OUTPUT | 18 V | 4.5 V | BREAK-BEFORE-MAKE | INDUSTRIAL | S-XQCC-N16 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 16 | UNSPECIFIED | HVQCCN | LCC16,.2SQ,32 | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | NICKEL PALLADIUM GOLD | NO LEAD | 800 µm | QUAD | 5 mm | 800 µm | 5 mm | MAXIM INTEGRATED PRODUCTS INC | QFN | HVQCCN, LCC16,.2SQ,32 | 16 | not_compliant | 8542.39.00.01 | ||||||||
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DG212ETE+T
Maxim Integrated Products
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Check for Price Buy | Yes | Yes | Transferred | 15 V | YES | -15 V | 175 Ω | 1 µs | 500 ns | SPST | CMOS | -18 V | -4.5 V | NO | 1 | 4 | 70 dB | SEPARATE OUTPUT | 18 V | 4.5 V | BREAK-BEFORE-MAKE | INDUSTRIAL | S-XQCC-N16 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 16 | UNSPECIFIED | HVQCCN | LCC16,.2SQ,32 | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | MATTE TIN | NO LEAD | 800 µm | QUAD | 5 mm | 800 µm | 5 mm | MAXIM INTEGRATED PRODUCTS INC | QFN | 5 X 5 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MO-220WHHB, TQFN-16 | 16 | compliant | 8542.39.00.01 | EAR99 | |||||
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DG212ETE+T
Analog Devices Inc
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Check for Price Buy | Yes | Active | 15 V | YES | -15 V | 175 Ω | 1 µs | 500 ns | SPST | CMOS | -18 V | -4.5 V | NO | 1 | 4 | 70 dB | SEPARATE OUTPUT | 18 V | 4.5 V | BREAK-BEFORE-MAKE | INDUSTRIAL | S-XQCC-N16 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 16 | UNSPECIFIED | HVQCCN | LCC16,.2SQ,32 | SQUARE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | Matte Tin (Sn) | NO LEAD | 800 µm | QUAD | 5 mm | 800 µm | 5 mm | ANALOG DEVICES INC | 16-LFCSP-5X5X0.75 | 5 X 5 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MO-220WHHB, TQFN-16 | 16 | compliant | 16-LFCSP-5X5X0.75 | 1992-02-01 | Analog Devices |