Filter Your Search
1 - 7 of 7 results
![]() |
CAT28F512GI-90T
Catalyst Semiconductor
|
Check for Price Buy | Yes | Transferred | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | YES | NO | 100000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 10 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||
![]() |
CAT28F512GI-90TE7
Catalyst Semiconductor
|
Check for Price Buy | Yes | Yes | Transferred | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
![]() |
CAT28F512GI-90TE13
onsemi
|
Check for Price Buy | Yes | Yes | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | BOTTOM/TOP | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 50 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NOR TYPE | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | QCCJ, | 32 | compliant | EAR99 | 8542.32.00.51 | |||||||||||
![]() |
CAT28F512GI-90TE7
onsemi
|
Check for Price Buy | Yes | Yes | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | BOTTOM/TOP | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 50 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NOR TYPE | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | QCCJ, | 32 | compliant | EAR99 | 8542.32.00.51 | |||||||||||
![]() |
CAT28F512GI-90TE13
Catalyst Semiconductor
|
Check for Price Buy | Yes | Yes | Transferred | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
![]() |
CAT28F512GI-90T
Rochester Electronics LLC
|
Check for Price Buy | Yes | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PQCC-J32 | COMMERCIAL | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ROCHESTER ELECTRONICS LLC | QFJ | QCCJ, | 32 | unknown | ||||||||||||||
![]() |
CAT28F512GI-90T
onsemi
|
Check for Price Buy | Yes | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | YES | NO | 100000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 10 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, LCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 |