Parametric results for: BSP319 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 1

5 hits Apply

90.0 mJ 2

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

50 V 5

5 hits Apply

Drain Current-Max (ID) (1)

3.8 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

70 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G4 5

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 Siemens 3

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Obsolete 2 Transferred 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

1.8 W 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply