Parametric results for: BSB017N03LX3GXT under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

225.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

30 V 1

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Drain Current-Max (ID) (1)

147 A 1

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Drain-source On Resistance-Max (1)

1.7 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-MBCC-N3 1

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Manufacturer (1)

Infineon Technologies AG 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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-40.0 °C 1

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METAL 1

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RECTANGULAR 1

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CHIP CARRIER 1

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Active 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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57 W 1

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Surface Mount (1)

YES 1

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