Parametric results for: APT20M22JVR under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 6 HIGH VOLTAGE 3

9 hits Apply

2500.0 mJ 9

9 hits Apply

ISOLATED 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

200 V 9

9 hits Apply

Drain Current-Max (ID) (1)

97 A 9

9 hits Apply

Drain-source On Resistance-Max (1)

22 mΩ 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PUFM-X4 8 R-XUFM-X4 1

9 hits Apply

Manufacturer (3)

Advanced Power Technology 3 Microchip Technology Inc 3 Microsemi Corporation 3

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Number of Elements (1)

1 9

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Number of Terminals (1)

4 9

9 hits Apply

ENHANCEMENT MODE 9

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150.0 °C 7

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PLASTIC/EPOXY 8 UNSPECIFIED 1

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RECTANGULAR 9

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FLANGE MOUNT 9

9 hits Apply

Active 3 Transferred 6

9 hits Apply

Yes 3

9 hits Apply

NOT SPECIFIED 9

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

450 W 5

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply