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7204L30DB
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 36.864 kbit | 9 | 4KX9 | 5 V | 30 ns | 25 MHz | 40 ns | BI-DIRECTIONAL FIFO | RETRANSMIT | 1 | 4000 | 4.096 k | ASYNCHRONOUS | NO | PARALLEL | 4 mA | 150 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn63Pb37) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | RENESAS ELECTRONICS CORP | CDIP | CERAMIC, DIP-28 | 28 | CD28 | not_compliant | NLR | 8542320071 | Renesas Electronics | ||||
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7204L30DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 36.864 kbit | 9 | 4KX9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 4000 | 4.096 k | ASYNCHRONOUS | NO | PARALLEL | 4 mA | 150 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | CERAMIC, DIP-28 | 28 | CD28 | not_compliant | EAR99 | 8542.32.00.71 | 1988-01-01 | |||||
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IDT7204L30DBG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 36.864 kbit | 9 | 4KX9 | 5 V | 30 ns | 40 ns | RETRANSMIT | 1 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e3 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, | 28 | compliant | EAR99 | 8542.32.00.71 | ||||||||||||
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7204L30DBG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 36.864 kbit | 9 | 4KX9 | 5 V | 30 ns | 40 ns | RETRANSMIT | 1 | 4000 | 4.096 k | ASYNCHRONOUS | NO | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e3 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, | 28 | compliant | EAR99 | 8542.32.00.71 | |||||||||||||
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IDT7204L30DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 36.864 kbit | 9 | 4KX9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 4 mA | 150 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP28,.6 | 28 | not_compliant | EAR99 | 8542.32.00.71 | 1988-01-01 |