Parametric results for: 2n5551 under Small Signal Bipolar Transistors
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2N5551
Continental Device India Ltd
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$0.0226 | Yes | Active | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | 350 mW | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | CONTINENTAL DEVICE INDIA LTD | TO-92 | PLASTIC, TO-92, 3 PIN | 3 | compliant | EAR99 | ||||||||||||||
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2N5551
Diotec Semiconductor AG
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$0.0237 | Yes | Active | e3 | Not Qualified | 1 | 260 | 10 | MATTE TIN | DIOTEC SEMICONDUCTOR AG | TO-92 | 3 | compliant | EAR99 | Diotec | |||||||||||||||||||||||||||
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2N5551TFR
onsemi
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$0.0549 | Yes | Yes | Active | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ONSEMI | TO-92-3 LF | compliant | EAR99 | onsemi | 135AR | |||||||||
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2N5551BU
onsemi
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$0.0683 | Yes | Yes | Active | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ONSEMI | TO-92-3 | compliant | EAR99 | onsemi | 135AN | |||||||||
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2N5551TF
onsemi
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$0.0736 | Yes | Yes | Active | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ONSEMI | TO-92-3 LF | compliant | EAR99 | onsemi | 135AR | |||||||||
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2N5551
onsemi
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$0.0897 | No | Obsolete | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | 235 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | ONSEMI | CASE 29-11, TO-226AA, 3 PIN | not_compliant | EAR99 | onsemi | |||||||||
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2N5551TA
onsemi
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$0.1054 | Yes | Yes | Active | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ONSEMI | TO-92-3 LF | compliant | EAR99 | onsemi | 135AR | |||||||||
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2N5551,412
NXP Semiconductors
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Check for Price | Yes | Obsolete | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | 6 pF | 350 mW | SWITCHING | SILICON | 200 mV | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | NXP SEMICONDUCTORS | TO-92 | CYLINDRICAL, O-PBCY-T3 | 3 | unknown | EAR99 | ||||||||
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2N5551K
Diodes Incorporated
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Check for Price | Obsolete | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 80 | SILICON | R-PSIP-W3 | e3 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | WIRE | SINGLE | DIODES INC | TO-92 | IN-LINE, R-PSIP-W3 | 3 | unknown | EAR99 | ||||||||||||||
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2N5551YIUBU
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | 160 V | 600 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 100 MHz | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 |