Parametric results for: 2N7002DW-R1-10001 under Other Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 1

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Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

60 V 1

1 hit Apply

Drain Current-Max (ID) (1)

115 mA 1

1 hit Apply

Drain-source On Resistance-Max (1)

5 Ω 1

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METAL-OXIDE SEMICONDUCTOR 1

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5 pF 1

1 hit Apply

R-PDSO-G6 1

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Manufacturer (1)

PanJit Semiconductor 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

200 mW 1

1 hit Apply

200 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply