Parametric results for: 2N5555 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

EUROPEAN PART NUMBER 9

72 hits Apply

Configuration (1)

SINGLE 64

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DS Breakdown Voltage-Min (1)

25 V 29

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Drain-source On Resistance-Max (2)

150 mΩ 1 150 Ω 55

Min (Ω) - Max (Ω)

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JUNCTION 70

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1.2 pF 64

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TO-92 65

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O-PBCY-T3 60 O-PBCY-W3 4 R-PBCY-T3 1

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e0 27 e1 1 e3 5

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Manufacturer (17)

Allegro MicroSystems LLC 1 Central Semiconductor Corp 16 Fairchild Semiconductor Corporation 2 Freescale Semiconductor 1 Micro Electronics Corporation 1 Micro Electronics Ltd 1 Motorola Mobility LLC 10 Motorola Semiconductor Products 10 National Semiconductor Corporation 1 onsemi 8 Semiconductors Inc 1 Solitron Devices Inc 1 Space Power Electronics Inc 1 Texas Instruments 15 Vishay Intertechnologies 1 Vishay Siliconix 1 Vishay Sprague 1

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Number of Elements (1)

1 64

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Number of Terminals (1)

3 65

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DEPLETION MODE 65

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150.0 °C 41

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PLASTIC/EPOXY 65

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RECTANGULAR 1 ROUND 64

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CYLINDRICAL 65

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Active 4 Contact Manufacturer 1 Obsolete 50 Transferred 17

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No 13 Yes 4

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235 1 NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 70

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350 mW 20

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310 mW 14 350 mW 2

Min (W) - Max (W)

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Surface Mount (1)

NO 70

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