Parametric results for: 1n6474us under Transient Suppressors

All Filters Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Surface Mount Technology Breakdown Voltage-Min (1)

33 V 23

31 hits Apply

Breakdown Voltage-Nom (1)

33 V 12

31 hits Apply

ISOLATED 23

31 hits Apply

Clamping Voltage-Max (1)

47.5 V 12

31 hits Apply

Configuration (1)

SINGLE 25

31 hits Apply

Diode Element Material (1)

SILICON 25

31 hits Apply

Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 31

31 hits Apply

O-LELF-N2 8 O-LELF-R2 13 R-LELF-R2 4

31 hits Apply

e0 14

31 hits Apply

Manufacturer (6)

Defense Logistics Agency 3 Microchip Technology Inc 8 Microsemi Corporation 8 Micross Components 6 Semtech Corporation 5 Sensitron Semiconductors 1

31 hits Apply

Number of Elements (1)

1 25

31 hits Apply

Polarity (1)

UNIDIRECTIONAL 28

31 hits Apply

Power Dissipation-Max (1)

3 W 22

31 hits Apply

Rep Pk Reverse Voltage-Max (1)

30.5 V 25

31 hits Apply

Surface Mount (1)

YES 28

31 hits Apply

Technology (1)

AVALANCHE 25

31 hits Apply