Parametric results for: 1N3595US under Rectifier Diodes

All Filters Additional Feature Application Breakdown Voltage-Min Case Connection Configuration Diode Element Material Diode Type Forward Voltage-Max (VF) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Output Current-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Reverse Recovery Time-Max Surface Mount

HIGH RELIABILITY 5 HIGH RELIABILITY, METALLURGICALLY BONDED 1 METALLURGICALLY BONDED 7

43 hits Apply

GENERAL PURPOSE 36

43 hits Apply

Breakdown Voltage-Min (1)

150 V 6

43 hits Apply

ISOLATED 43

43 hits Apply

Configuration (1)

SINGLE 43

43 hits Apply

Diode Element Material (1)

SILICON 43

43 hits Apply

Diode Type (1)

RECTIFIER DIODE 43

43 hits Apply

Forward Voltage-Max (VF) (1)

1 V 29

43 hits Apply

O-GELF-R2 2 O-LELF-R2 41

43 hits Apply

e0 12

43 hits Apply

Manufacturer (6)

Defense Logistics Agency 6 Microchip Technology Inc 10 Microsemi Corporation 11 Semicoa Semiconductors 1 Sensitron Semiconductors 10 VPT Components 5

43 hits Apply

Number of Elements (1)

1 43

43 hits Apply

Output Current-Max (3)

125 mA 1 150 mA 39 200 mA 3

Min (A) - Max (A)

43 hits Apply

Rep Pk Reverse Voltage-Max (2)

125 V 32 150 V 3

Min (V) - Max (V)

43 hits Apply

Reverse Current-Max (1)

1 nA 9

43 hits Apply

Reverse Recovery Time-Max (1)

3 µs 24

43 hits Apply

Surface Mount (1)

YES 43

43 hits Apply