Part Details for STP20NE06 by STMicroelectronics
Results Overview of STP20NE06 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP20NE06 Information
STP20NE06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STP20NE06
STP20NE06 CAD Models
STP20NE06 Part Data Attributes
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STP20NE06
STMicroelectronics
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Datasheet
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STP20NE06
STMicroelectronics
20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP20NE06
This table gives cross-reference parts and alternative options found for STP20NE06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20NE06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BUK453-60B | NXP Semiconductors | Check for Price | TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | STP20NE06 vs BUK453-60B |
| BUZ71 | New Jersey Semiconductor Products Inc | Check for Price | Trans MOSFET N-CH 50V 17A 3-Pin(3+Tab) TO-220 | STP20NE06 vs BUZ71 |
| IRFZ24NPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | STP20NE06 vs IRFZ24NPBF |
| MTP15N05E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 15A I(D), 50V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NE06 vs MTP15N05E |
| BUZ71 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | STP20NE06 vs BUZ71 |
| BUZ71S2 | Siemens | Check for Price | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NE06 vs BUZ71S2 |
| BTS114 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | STP20NE06 vs BTS114 |
| HUF75307P3 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NE06 vs HUF75307P3 |
| BUZ71 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NE06 vs BUZ71 |
| BUZ71 | Motorola Mobility LLC | Check for Price | 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | STP20NE06 vs BUZ71 |
STP20NE06 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP20NE06 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, make sure to follow the recommended operating conditions and biasing schemes outlined in the datasheet. This includes providing a stable voltage supply, setting the correct gate-source voltage, and ensuring the device is operated within the recommended current limits.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This includes using a thermal pad, thermal vias, and a heat sink if necessary. Additionally, ensure that the device is mounted correctly and that the PCB is designed to minimize thermal resistance.
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To protect the STP20NE06 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices or circuits in the design.
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The STP20NE06 is a high-reliability device with a typical lifetime of 10-15 years or more, depending on the operating conditions and environment. However, it's essential to follow proper design, assembly, and testing procedures to ensure the device meets its expected lifetime.