Part Details for SI7938DP-T1-GE3 by Vishay Siliconix
Results Overview of SI7938DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SI7938DP-T1-GE3 Information
SI7938DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7938DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7938DP-T1-GE3CT-ND
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DigiKey | MOSFET 2N-CH 40V 60A PPAK SO8 Min Qty: 1 Lead time: 19 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
10254 In Stock |
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$0.6250 / $1.7600 | Buy Now |
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DISTI #
70459569
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RS | MOSFET 2N-CH 40V 60A PPAK SO-8 Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.9900 / $1.1600 | RFQ |
Part Details for SI7938DP-T1-GE3
SI7938DP-T1-GE3 CAD Models
SI7938DP-T1-GE3 Part Data Attributes
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SI7938DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7938DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C6 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 88.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 18.5 A | |
| Drain-source On Resistance-Max | 0.0058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SI7938DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7938DP-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to minimize noise and ensure stability.
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The SI7938DP-T1-GE3 is rated for operation from -40°C to 125°C (junction temperature). However, it's recommended to derate the device's performance at temperatures above 85°C to ensure reliability.
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Yes, the SI7938DP-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required specifications.
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To troubleshoot issues with the SI7938DP-T1-GE3, check the input voltage, output load, and decoupling capacitors. Ensure the device is properly biased, and the output is not overloaded. If issues persist, consult the datasheet or contact Vishay's technical support for further assistance.