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Part Details for SI7460DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7460DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI7460DP-T1-GE3 Information
SI7460DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7460DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2547309
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Farnell | MOSFET, N-CH, 60V, 11A, POWERPAK SO-8 RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Cut Tape | 1024 |
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$1.2920 / $3.2232 | Buy Now |
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DISTI #
2547309RL
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Farnell | MOSFET, N-CH, 60V, 11A, POWERPAK SO-8 RoHS: Compliant Min Qty: 100 Lead time: 17 Weeks, 1 Days Container: Reel | 1024 |
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$1.2920 / $1.8554 | Buy Now |
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DISTI #
1684075
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Farnell | MOSFET, N, PPAK SO-8 RoHS: Compliant Min Qty: 1 Lead time: 12 Weeks, 1 Days Container: Each | 0 |
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$1.0536 / $2.3971 | Buy Now |
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DISTI #
SI7460DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 60V 11A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7460DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$1.1647 / $1.2375 | Buy Now |
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DISTI #
781-SI7460DP-T1-GE3
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Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 0 |
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$1.1000 / $2.9000 | Order Now |
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DISTI #
SI7460DP-T1-GE3
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TTI | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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Buy Now | |
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DISTI #
SI7460DP-T1-GE3
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TTI | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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Buy Now | |
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DISTI #
SI7460DP-T1-GE3
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Avnet Asia | Trans MOSFET N-CH 60V 11A 8-Pin PowerPAK SO T/R (Alt: SI7460DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 3000 |
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RFQ | |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 2453 |
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$1.0300 / $1.2900 | Buy Now |
Part Details for SI7460DP-T1-GE3
SI7460DP-T1-GE3 CAD Models
SI7460DP-T1-GE3 Part Data Attributes
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SI7460DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7460DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0096 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.4 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7460DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7460DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7460DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7370DP-T1-GE3 | Vishay Intertechnologies | $2.4134 | Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SI7460DP-T1-GE3 vs SI7370DP-T1-GE3 |
| SI7460DP-T1-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 | SI7460DP-T1-GE3 vs SI7460DP-T1-E3 |
SI7460DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7460DP-T1-GE3 is a standard SOT23-6 package with a 1.6mm x 2.9mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor.
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The SI7460DP-T1-GE3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal thermal performance and to prevent overheating.
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To protect the SI7460DP-T1-GE3 from overvoltage and undervoltage conditions, add a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range.
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The thermal derating curve for the SI7460DP-T1-GE3 is typically 1.5% per degree Celsius above 25°C. This means that for every 1°C increase in temperature above 25°C, the maximum output current capability decreases by 1.5%.