Part Details for RSS100N03 by ROHM Semiconductor
Results Overview of RSS100N03 by ROHM Semiconductor
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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RSS100N03 Information
RSS100N03 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for RSS100N03
RSS100N03 CAD Models
RSS100N03 Part Data Attributes
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RSS100N03
ROHM Semiconductor
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Datasheet
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RSS100N03
ROHM Semiconductor
Power Field-Effect Transistor, 10A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |