Part Details for PMV65XP,215 by NXP Semiconductors
Results Overview of PMV65XP,215 by NXP Semiconductors
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PMV65XP,215 Information
PMV65XP,215 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PMV65XP,215
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 15 | 17628 |
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$0.0456 / $0.3375 | Buy Now |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 36000 |
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$0.0585 / $0.3900 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 14102 |
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$0.0563 / $0.4500 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 910 |
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$0.1440 / $0.2700 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 404 |
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$0.1200 / $0.4000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 16 |
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$0.4320 / $0.5400 | Buy Now |
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DISTI #
SMC-PMV65XP,215
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 90900 |
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Chip 1 Exchange | INSTOCK | 49274 |
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RFQ |
Part Details for PMV65XP,215
PMV65XP,215 CAD Models
PMV65XP,215 Part Data Attributes
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PMV65XP,215
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PMV65XP,215
NXP Semiconductors
PMV65XP - 20 V, single P-channel Trench MOSFET TO-236 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-236 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT23 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | LOW THRESHOLD | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 0.076 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.92 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PMV65XP,215
This table gives cross-reference parts and alternative options found for PMV65XP,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PMV65XP,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| PMV65XP,215 | Nexperia | $0.1524 | PMV65XP - 20 V, single P-channel Trench MOSFET@en-us TO-236 3-Pin | PMV65XP,215 vs PMV65XP,215 |
| PMV65XP | Nexperia | Check for Price | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | PMV65XP,215 vs PMV65XP |
| PMV65XP | NXP Semiconductors | Check for Price | TRANSISTOR 3900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | PMV65XP,215 vs PMV65XP |
| SSM3J317T | Toshiba America Electronic Components | Check for Price | TRANSISTOR 3600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3S1A, TSM, 3 PIN, FET General Purpose Small Signal | PMV65XP,215 vs SSM3J317T |
PMV65XP,215 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
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Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor the device's junction temperature and adjust the system accordingly.
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Monitor the device's temperature, voltage, and current. Implement over-temperature protection (OTP), over-voltage protection (OVP), and over-current protection (OCP) to prevent damage.
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Consult the application notes and reference designs provided by NXP. Optimize the device's configuration, including the output filter, input capacitance, and feedback network, for the specific application requirements.
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Follow standard ESD handling procedures, including the use of ESD-safe workstations, wrist straps, and packaging materials. Implement ESD protection devices, such as TVS diodes, in the system design.