Part Details for JANTX2N7335 by International Rectifier
Results Overview of JANTX2N7335 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N7335 Information
JANTX2N7335 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTX2N7335
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 82 |
|
RFQ | ||
|
DISTI #
JANTX2N7335
|
IBS Electronics | JANTX2N7335 by INTERNATIONAL RECTIFIER is a 100V, 0.75A, 14-Pin MO-036AB transistor designed for high-reliability applications, offering robust performance in demanding environments. Min Qty: 50 Package Multiple: 1 | 0 |
|
$156.0000 / $163.8000 | Buy Now |
|
|
NexGen Digital | 109 |
|
RFQ |
Part Details for JANTX2N7335
JANTX2N7335 CAD Models
JANTX2N7335 Part Data Attributes
|
|
JANTX2N7335
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
JANTX2N7335
International Rectifier
Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Package Description | HERMETIC SEALED, MO-036AB, 14 PIN | |
| Reach Compliance Code | unknown | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 75 mJ | |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.75 A | |
| Drain-source On Resistance-Max | 1.73 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-036AB | |
| JESD-30 Code | R-CDIP-T14 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 1.4 W | |
| Power Dissipation-Max (Abs) | 1.4 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/599 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 80 ns | |
| Turn-on Time-Max (ton) | 90 ns |