Manufacturer | Description | Price Range | Set Alert | Details |
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International Rectifier | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | $67.7560 / $262.5000 |
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Infineon Technologies AG | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN |
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Defense Logistics Agency | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN |
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