Part Details for JANTX2N6758 by Infineon Technologies AG
Results Overview of JANTX2N6758 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTX2N6758 Information
JANTX2N6758 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTX2N6758
JANTX2N6758 CAD Models
JANTX2N6758 Part Data Attributes
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JANTX2N6758
Infineon Technologies AG
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Datasheet
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JANTX2N6758
Infineon Technologies AG
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-3, 2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.49 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/542 | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6758
This table gives cross-reference parts and alternative options found for JANTX2N6758. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6758, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF231 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, | JANTX2N6758 vs IRF231 |
| IRF230 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | JANTX2N6758 vs IRF230 |
| JANTX2N6758 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JANTX2N6758 vs JANTX2N6758 |
| JANTXV2N6758 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | JANTX2N6758 vs JANTXV2N6758 |
| IRF233 | Intersil Corporation | Check for Price | 8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | JANTX2N6758 vs IRF233 |
| IRF231 | Intersil Corporation | Check for Price | 9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | JANTX2N6758 vs IRF231 |
| 2N6758R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTX2N6758 vs 2N6758R1 |
| 2N6758R1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | JANTX2N6758 vs 2N6758R1 |
| IRF230 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JANTX2N6758 vs IRF230 |
| IRF233 | New Jersey Semiconductor Products Inc | Check for Price | Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 | JANTX2N6758 vs IRF233 |
JANTX2N6758 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for JANTX2N6758 is a standard TO-263 (D2-PAK) package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
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To ensure reliability in high-temperature applications, it is recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below 150°C.
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The maximum allowed voltage transient for JANTX2N6758 is 80V for a duration of less than 100ns, as specified in the datasheet. However, it is recommended to consult with Infineon's application engineers for specific guidance on voltage transient tolerance.
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Yes, JANTX2N6758 is qualified for automotive applications and meets the requirements of AEC-Q101. However, it is recommended to consult with Infineon's application engineers to ensure that the device meets the specific requirements of the target application.
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JANTX2N6758 has built-in ESD protection, but it is still recommended to follow proper ESD handling practices during assembly and testing, such as using ESD-safe equipment and materials, and ensuring that the device is properly grounded.