| International Rectifier |
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
$19.5000 / $40.6660
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| Harris Semiconductor |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
$13.6500 / $40.0000
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| Intersil Corporation |
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
$26.0000
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| Vishay Siliconix |
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, |
$40.0000 / $40.6660
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| CRC Industries UK Limited |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-3 |
$40.6660
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| SGS Semiconductor Ltd |
IN STOCK SHIP TODAY |
$17.5000 / $26.9200
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
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| Microsemi Corporation |
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN |
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| Infineon Technologies AG |
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
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| Motorola Mobility LLC |
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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| Unitrode Corporation |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, |
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| Defense Logistics Agency |
Power Field-Effect Transistor, 9A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN |
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