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Part Details for IXTY08N100D2 by Littelfuse Inc
Results Overview of IXTY08N100D2 by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXTY08N100D2 Information
IXTY08N100D2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTY08N100D2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AK7038
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Newark | Mosfet, 1Kv, 0.8A, 150Deg C Rohs Compliant: Yes |Littelfuse IXTY08N100D2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 600 |
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$1.7900 / $3.8500 | Buy Now |
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DISTI #
03AH1899
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Newark | Mosfet, N-Ch, 1Kv, 0.8A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:800Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Littelfuse IXTY08N100D2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.7900 / $3.8500 | Buy Now |
|
DISTI #
IXTY08N100D2-ND
|
DigiKey | MOSFET N-CH 1000V 800MA TO252 Min Qty: 1 Lead time: 24 Weeks Container: Tube | Temporarily Out of Stock |
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$1.7866 / $3.9300 | Buy Now |
Part Details for IXTY08N100D2
IXTY08N100D2 CAD Models
IXTY08N100D2 Part Data Attributes
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IXTY08N100D2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTY08N100D2
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Drain-source On Resistance-Max | 21 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.5 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
IXTY08N100D2 Frequently Asked Questions (FAQ)
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The recommended footprint and land pattern for the IXTY08N100D2 can be found in the Littelfuse application note AN931, which provides guidelines for surface mount assembly of thyristor devices.
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To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Littelfuse application note AN931. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
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The IXTY08N100D2 has a high power dissipation capability, so proper thermal management is crucial. Ensure good heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines to minimize thermal resistance.
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Yes, the IXTY08N100D2 is designed for high-reliability applications. However, it's essential to follow the recommended derating guidelines and ensure that the device is used within its specified operating conditions to maintain reliability and safety.
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To protect the IXTY08N100D2 from EOS and ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement circuit protection devices such as TVS diodes or varistors in the system design.