Part Details for IXTT75N10L2 by Littelfuse Inc
Results Overview of IXTT75N10L2 by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXTT75N10L2 Information
IXTT75N10L2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTT75N10L2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1856
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Newark | Disc Mosfet N-Ch Linear L2 To-268Aa/ Tube |Littelfuse IXTT75N10L2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$10.8300 / $11.6600 | Buy Now |
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DISTI #
E02:0323_07043646
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Arrow Electronics | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Lead time: 39 Weeks Date Code: 2443 | Europe - 100 |
|
$11.1325 / $15.7108 | Buy Now |
|
DISTI #
86270150
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Verical | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Date Code: 2443 | Americas - 100 |
|
$11.1937 / $15.5868 | Buy Now |
Part Details for IXTT75N10L2
IXTT75N10L2 CAD Models
IXTT75N10L2 Part Data Attributes
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IXTT75N10L2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTT75N10L2
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.021 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 350 pF | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Pulsed Drain Current-Max (IDM) | 225 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTT75N10L2
This table gives cross-reference parts and alternative options found for IXTT75N10L2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT75N10L2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTH75N10L2 | Littelfuse Inc | $11.1495 | Power Field-Effect Transistor, | IXTT75N10L2 vs IXTH75N10L2 |
| IXTT75N10L2 | IXYS Corporation | $7.7212 | Power Field-Effect Transistor, 75A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXTT75N10L2 vs IXTT75N10L2 |
| IXTH75N10L2 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXTT75N10L2 vs IXTH75N10L2 |
IXTT75N10L2 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXTT75N10L2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
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Yes, the IXTT75N10L2 is suitable for high-reliability applications. Littelfuse Inc. has qualified the device to meet the requirements of AEC-Q101, which ensures that it meets the stringent reliability standards for automotive and other high-reliability applications.
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To ensure proper soldering, follow the recommended soldering profile: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. Additionally, use a solder with a melting point of 217°C to 221°C, and ensure the PCB is clean and free of oxidation.
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The maximum allowed voltage transient for the IXTT75N10L2 is 100V for a duration of 100ns. Exceeding this limit may damage the device or affect its reliability.
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Yes, you can use multiple IXTT75N10L2 devices in parallel to increase current handling. However, ensure that each device has its own heat sink and that the devices are properly matched to prevent current imbalance. Additionally, follow the recommended layout and thermal management guidelines to prevent overheating.