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Part Details for IXTA08N120P by Littelfuse Inc
Results Overview of IXTA08N120P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
IXTA08N120P Information
IXTA08N120P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA08N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1253
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Newark | Disc Mosfet N-Ch Std-Polar To-263D2/ Tube |Littelfuse IXTA08N120P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.9800 / $2.6500 | Buy Now |
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DISTI #
IXTA08N120P-ND
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DigiKey | MOSFET N-CH 1200V 800MA TO263 Min Qty: 1 Lead time: 60 Weeks Container: Tube |
195 In Stock |
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$1.8611 / $4.4100 | Buy Now |
Part Details for IXTA08N120P
IXTA08N120P CAD Models
IXTA08N120P Part Data Attributes
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IXTA08N120P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTA08N120P
Littelfuse Inc
Power Field-Effect Transistor, 0.8A I(D), 1200V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 0.8 A | |
| Drain-source On Resistance-Max | 25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 1.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA08N120P
This table gives cross-reference parts and alternative options found for IXTA08N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA08N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTA08N120P | IXYS Corporation | $1.7360 | Power Field-Effect Transistor, 0.8A I(D), 1200V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXTA08N120P vs IXTA08N120P |
IXTA08N120P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXTA08N120P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, IXTA08N120P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range.
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The maximum allowed voltage transient for IXTA08N120P is 150% of the rated voltage (180V) for a duration of less than 10ms, but it's recommended to consult the datasheet and application notes for specific guidance on voltage transients.
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Yes, you can parallel multiple IXTA08N120P devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.