Part Details for IXTA08N120P by IXYS Corporation
Results Overview of IXTA08N120P by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
IXTA08N120P Information
IXTA08N120P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA08N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTA08N120P
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Mouser Electronics | MOSFETs 0.8 Amps 1200V 25 Rds RoHS: Compliant | 500 |
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$1.8600 / $4.3900 | Buy Now |
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DISTI #
IXTA08N120P
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TTI | MOSFETs 0.8 Amps 1200V 25 Rds Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 500 In Stock |
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$2.4800 / $2.6900 | Buy Now |
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DISTI #
IXTA08N120P
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TME | Transistor: N-MOSFET, Polar™, unipolar, 1.2kV, 0.8A, 50W, TO263 Min Qty: 1 | 0 |
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$2.2200 / $3.1000 | RFQ |
Part Details for IXTA08N120P
IXTA08N120P CAD Models
IXTA08N120P Part Data Attributes
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IXTA08N120P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA08N120P
IXYS Corporation
Power Field-Effect Transistor, 0.8A I(D), 1200V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 0.8 A | |
| Drain-source On Resistance-Max | 25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 1.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA08N120P
This table gives cross-reference parts and alternative options found for IXTA08N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA08N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTP08N120P | Littelfuse Inc | $3.0173 | Power Field-Effect Transistor, 0.8A I(D), 1200V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXTA08N120P vs IXTP08N120P |
IXTA08N120P Frequently Asked Questions (FAQ)
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The recommended gate resistor value for IXTA08N120P is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and ringing, but may increase the turn-on time.
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To ensure proper cooling, the IXTA08N120P should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to provide good airflow, and the device should be mounted using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K.
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The maximum allowed voltage transient for IXTA08N120P is typically 150% of the rated voltage, or 180V in this case. However, it's recommended to limit voltage transients to 120% of the rated voltage to ensure reliable operation and prevent damage to the device.
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Yes, IXTA08N120P can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive signals are properly synchronized to prevent uneven current sharing.
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To protect IXTA08N120P from ESD, it's recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging and materials, and ensure that all personnel handling the device are grounded using wrist straps or other ESD-protective devices.