Datasheets
IXGH48N60C3D1 by:

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3

Part Details for IXGH48N60C3D1 by IXYS Corporation

Results Overview of IXGH48N60C3D1 by IXYS Corporation

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IXGH48N60C3D1 Information

IXGH48N60C3D1 by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXGH48N60C3D1

Part # Distributor Description Stock Price Buy
DISTI # 71AH4559
Newark Igbt, Single, 600V, 75A, To-247, Continuous Collector Current:75A, Collector Emitter Saturation Voltage:2.3V, Power Dissipation:300W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Ixys Semiconductor IXGH48N60C3D1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 210
  • 1 $9.9700
  • 10 $9.1900
  • 25 $7.8200
  • 60 $6.4400
  • 120 $5.9600
  • 270 $5.4800
  • 510 $5.4700
$5.4700 / $9.9700 Buy Now
DISTI # IXGH48N60C3D1-ND
DigiKey IGBT PT 600V 75A TO-247AD Min Qty: 1 Lead time: 38 Weeks Container: Tube 153
In Stock
  • 1 $10.8000
  • 30 $6.4317
  • 120 $5.4734
  • 510 $5.0905
$5.0905 / $10.8000 Buy Now
DISTI # 747-IXGH48N60C3D1
Mouser Electronics IGBTs 30 Amps 600V RoHS: Compliant 731
  • 1 $10.6700
  • 10 $10.4800
  • 30 $6.4100
  • 120 $5.4600
  • 270 $5.4200
  • 1,020 $5.0900
$5.0900 / $10.6700 Buy Now
DISTI # 87342057
Verical Trans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD Min Qty: 5 Package Multiple: 1 Americas - 238
  • 5 $14.1400
  • 10 $11.7040
  • 30 $8.8760
  • 120 $8.3720
$8.3720 / $14.1400 Buy Now
DISTI # IXGH48N60C3D1
TTI IGBTs 30 Amps 600V Min Qty: 30 Package Multiple: 30 Container: Tube Americas - 360
In Stock
  • 30 $6.3500
  • 120 $5.4100
  • 270 $5.3000
  • 510 $5.0900
  • 1,020 $4.9900
$4.9900 / $6.3500 Buy Now
DISTI # IXGH48N60C3D1
TTI IGBTs 30 Amps 600V Min Qty: 30 Package Multiple: 30 Container: Tube Americas - 360
In Stock
  • 30 $6.3500
  • 120 $5.4100
  • 270 $5.3000
  • 510 $5.0900
  • 1,020 $4.9900
$4.9900 / $6.3500 Buy Now
DISTI # IXGH48N60C3D1
TME Transistor: IGBT, GenX3™, 600V, 48A, 300W, TO247-3 Min Qty: 1 268
  • 1 $8.7700
  • 3 $7.8900
  • 10 $6.9800
  • 30 $6.2700
$6.2700 / $8.7700 Buy Now
Sense Electronic Company Limited TO-247-3 2011
RFQ

Part Details for IXGH48N60C3D1

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IXGH48N60C3D1 Part Data Attributes

IXGH48N60C3D1 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXGH48N60C3D1 IXYS Corporation Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection COLLECTOR
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 187 ns
Turn-on Time-Nom (ton) 45 ns

IXGH48N60C3D1 Related Parts

IXGH48N60C3D1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the IXGH48N60C3D1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.

  • To ensure proper thermal management, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material, such as thermal grease or thermal tape, and ensure the heat sink is properly mounted and secured.

  • The recommended gate resistance for the IXGH48N60C3D1 is between 10 ohms and 20 ohms. This value helps to minimize oscillations and ensure stable operation.

  • Yes, the IXGH48N60C3D1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive circuits are synchronized to prevent uneven current sharing.

  • The maximum allowable voltage transient for the IXGH48N60C3D1 is 1200 V, as specified in the datasheet. Exceeding this value may damage the device.

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