Datasheets
IRFS4310ZTRLPBF by:

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Part Details for IRFS4310ZTRLPBF by International Rectifier

Results Overview of IRFS4310ZTRLPBF by International Rectifier

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IRFS4310ZTRLPBF Information

IRFS4310ZTRLPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFS4310ZTRLPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   15680
RFQ
Quest Components 120 A, 100 V, 0.006 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB 10640
  • 1 $11.4642
  • 225 $8.1523
  • 492 $7.6428
$7.6428 / $11.4642 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant Stock DE - 130
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRFS4310ZTRLPBF

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IRFS4310ZTRLPBF Part Data Attributes

IRFS4310ZTRLPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFS4310ZTRLPBF International Rectifier Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description LEAD FREE, D2PAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 560 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFS4310ZTRLPBF

This table gives cross-reference parts and alternative options found for IRFS4310ZTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4310ZTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRFS4310Z Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 IRFS4310ZTRLPBF vs AUIRFS4310Z
Part Number Manufacturer Composite Price Description Compare
IRFS4310ZTRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRFS4310ZTRLPBF vs IRFS4310ZTRRPBF
AUIRFS4310ZTRL International Rectifier Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRFS4310ZTRLPBF vs AUIRFS4310ZTRL
IRFS4310ZTRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRFS4310ZTRLPBF vs IRFS4310ZTRRPBF
IRFS4310ZPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRFS4310ZTRLPBF vs IRFS4310ZPBF
IRFS4310ZPBF International Rectifier Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRFS4310ZTRLPBF vs IRFS4310ZPBF
AUIRFS4310ZTRL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 IRFS4310ZTRLPBF vs AUIRFS4310ZTRL

IRFS4310ZTRLPBF Related Parts

IRFS4310ZTRLPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFS4310ZTRLPBF is -55°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.

  • The recommended gate drive voltage for the IRFS4310ZTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRFS4310ZTRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.

  • The maximum allowable power dissipation for the IRFS4310ZTRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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