Datasheets
IRFR13N15DPBF by:
Infineon Technologies AG

Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Part Details for IRFR13N15DPBF by Infineon Technologies AG

Results Overview of IRFR13N15DPBF by Infineon Technologies AG

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IRFR13N15DPBF Information

IRFR13N15DPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFR13N15DPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR13N15DPBF-ND
DigiKey MOSFET N-CH 150V 14A DPAK Lead time: 98 Weeks Container: Tube Limited Supply - Call
Buy Now

Part Details for IRFR13N15DPBF

IRFR13N15DPBF CAD Models

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IRFR13N15DPBF Part Data Attributes

IRFR13N15DPBF Infineon Technologies AG
Buy Now Datasheet
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IRFR13N15DPBF Infineon Technologies AG Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 38 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 86 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR13N15DPBF

This table gives cross-reference parts and alternative options found for IRFR13N15DPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR13N15DPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR13N15D International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR13N15DPBF vs IRFR13N15D
IRFR13N15DTR International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR13N15DPBF vs IRFR13N15DTR
IRFR13N15DPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15DPBF vs IRFR13N15DPBF
IRFR13N15DTRLP International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15DPBF vs IRFR13N15DTRLP
IRFR13N15DTRPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15DPBF vs IRFR13N15DTRPBF
IRFR13N15D Infineon Technologies AG Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR13N15DPBF vs IRFR13N15D
934055758118 Nexperia Check for Price Power Field-Effect Transistor IRFR13N15DPBF vs 934055758118
PSMN063-150D Nexperia Check for Price Power Field-Effect Transistor IRFR13N15DPBF vs PSMN063-150D
934055758118 NXP Semiconductors Check for Price TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET General Purpose Power IRFR13N15DPBF vs 934055758118
IRFR13N15DTRR International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR13N15DPBF vs IRFR13N15DTRR

IRFR13N15DPBF Related Parts

IRFR13N15DPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFR13N15DPBF is -40°C to 175°C.

  • Yes, the IRFR13N15DPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The maximum current rating for the IRFR13N15DPBF is 130A.

  • Yes, the IRFR13N15DPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The IRFR13N15DPBF comes in a TO-220AB package.

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