Manufacturer | Description | Price Range | Set Alert | Details |
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International Rectifier | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | $144.1410 / $199.2113 |
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Hongxing Electrical Ltd | TO-59 |
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TT Electronics Resistors | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN |
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Temic Semiconductors | Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 |
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TT Electronics Power and Hybrid / Semelab Limited | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN |
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New Jersey Semiconductor Products Inc | Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA |
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Sensitron Semiconductors | Power Field-Effect Transistor, |
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Infineon Technologies AG | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, |
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