Part Details for IRFF230 by International Rectifier
Results Overview of IRFF230 by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFF230 Information
IRFF230 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFF230
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V36:1790_15909476
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Arrow Electronics | Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39 RoHS: Not Compliant Min Qty: 7 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2230 | Americas - 224 |
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$11.2645 | Buy Now |
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Bristol Electronics | 13 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5.5A I(D),TO-205AF | 1 |
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$49.6776 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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NexGen Digital | 192 |
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RFQ |
Part Details for IRFF230
IRFF230 CAD Models
IRFF230 Part Data Attributes
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IRFF230
International Rectifier
Buy Now
Datasheet
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IRFF230
International Rectifier
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Reach Compliance Code | compliant | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.46 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 25 W | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 80 ns |
IRFF230 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF230 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
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To ensure the IRF230 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuit should be capable of sourcing sufficient current to charge the gate capacitance quickly. A gate resistor value of 10-20 ohms is typically recommended.
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The maximum allowed drain-source voltage (Vds) for the IRF230 is 200V, but it's recommended to derate the voltage to 150-180V to ensure reliable operation and minimize the risk of avalanche breakdown.
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To protect the IRF230 from overcurrent and overheating, it's recommended to use a current sense resistor and a thermal monitoring circuit to detect excessive current and temperature. A fuse or a current limiter can also be used to prevent catastrophic failure.
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Yes, the IRF230 can be used in high-frequency switching applications, but it's essential to consider the device's switching losses, gate charge, and parasitic capacitances. A proper gate drive circuit and layout design are crucial to minimize switching losses and ensure reliable operation.