| New Jersey Semiconductor Products Inc |
Power Field-Effect Transistor |
$16.0000 / $20.8000
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| Harris Semiconductor |
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
$14.3000
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| Thomson Consumer Electronics |
Transistor |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| Temic Semiconductors |
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED PACKAGE-3 |
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| Infineon Technologies AG |
Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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| Intersil Corporation |
4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| TT Electronics Power and Hybrid / Semelab Limited |
4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| Rochester Electronics LLC |
4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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