Part Details for IRFF230 by Infineon Technologies AG
Results Overview of IRFF230 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFF230 Information
IRFF230 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFF230
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | Single N-Channel 200 V 2.5 W 42.1 nC Hexfet Transistor Through Hole - TO-39 RoHS: Not Compliant pbFree: No Min Qty: 25 Package Multiple: 100 Container: Tray | 25Tray |
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$13.2000 | Buy Now |
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Future Electronics | Single N-Channel 200 V 2.5 W 42.1 nC Hexfet Transistor Through Hole - TO-39 Min Qty: 100 Package Multiple: 100 |
25 null |
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$13.2000 | Buy Now |
Part Details for IRFF230
IRFF230 CAD Models
IRFF230 Part Data Attributes
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IRFF230
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFF230
Infineon Technologies AG
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.46 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFF230
This table gives cross-reference parts and alternative options found for IRFF230. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF230, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFF230 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | IRFF230 vs IRFF230 |
| JAN2N6798 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | IRFF230 vs JAN2N6798 |
| JANTXV2N6798 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | IRFF230 vs JANTXV2N6798 |
| 2N6798 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | IRFF230 vs 2N6798 |
| IRFF230 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRFF230 vs IRFF230 |
| IRFF230-JQR-BR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 5.5A, 200V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | IRFF230 vs IRFF230-JQR-BR1 |
| IRFF230PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | IRFF230 vs IRFF230PBF |
IRFF230 Frequently Asked Questions (FAQ)
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The IRFF230 can operate from -55°C to 175°C, making it suitable for high-reliability applications.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This helps maintain a stable gate-source voltage.
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To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the IRFF230 close to the power source and use a solid ground plane. Avoid using vias or narrow traces near the device.
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Yes, the IRFF230 is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout, decoupling, and thermal management to minimize losses and prevent overheating.
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Use a voltage clamp or a zener diode to protect against overvoltage. For overcurrent protection, add a current-sensing resistor and a comparator to detect excessive current. You can also use a dedicated overcurrent protection IC.