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Transistors / Power Field-Effect Transistors / IRFD024PBF
Datasheets
IRFD024PBF by:

Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, DIP-4

Part Details for IRFD024PBF by Vishay Intertechnologies

Results Overview of IRFD024PBF by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Industrial Automation Medical Imaging Motor control systems

IRFD024PBF Information

IRFD024PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFD024PBF

Part # Distributor Description Stock Price Buy
DISTI # 70078891
RS Power MOSFET, N-Ch, VDSS 60V, RDS(ON) 0.1Ohm, ID 2.5A, HD-1,PD 1.3W, VGS+/-20V, Qg 25nC Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Bulk 27
  • 1 $2.2600
  • 5 $2.0800
  • 10 $1.9900
  • 100 $1.8100
  • 250 $1.6900
$1.6900 / $2.2600 Buy Now
Future Electronics Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 1094
Tube
  • 1 $0.8600
  • 40 $0.8350
  • 150 $0.8150
  • 500 $0.7950
  • 2,000 $0.7500
$0.7500 / $0.8600 Buy Now
DISTI # 87803361
Verical Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP RoHS: Compliant Min Qty: 17 Package Multiple: 1 Date Code: 2505 Americas - 650
  • 18 $1.1021
  • 100 $0.9597
  • 250 $0.9437
  • 500 $0.8136
  • 1,000 $0.7202
  • 2,500 $0.7131
  • 5,000 $0.7059
$0.7059 / $1.1021 Buy Now
Bristol Electronics   Min Qty: 3 868
  • 3 $2.3400
  • 10 $1.7550
  • 30 $1.4625
  • 104 $0.8775
  • 343 $0.8190
$0.8190 / $2.3400 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 2.5A I(D), 60V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 368
  • 1 $3.1200
  • 129 $1.0920
  • 276 $1.0140
$1.0140 / $3.1200 Buy Now
DISTI # IRFD024PBF
TTI MOSFETs RECOMMENDED ALT IRFD RoHS: Compliant pbFree: Pb-Free Min Qty: 100 Package Multiple: 100 Container: Tube Americas - 2300
In Stock
  • 100 $1.0000
$1.0000 Buy Now
Future Electronics Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet - HVMDIP-4 Min Qty: 1 Package Multiple: 1 1094
null
  • 1 $0.8600
  • 40 $0.8350
  • 150 $0.8150
  • 500 $0.7950
  • 2,000 $0.7500
$0.7500 / $0.8600 Buy Now
DISTI # IRFD024PBF
TME Transistor: N-MOSFET, unipolar, 60V, 1.8A, 1.3W, DIP4 Min Qty: 1 2519
  • 1 $1.6900
  • 10 $1.1400
  • 100 $0.8700
  • 200 $0.8300
  • 500 $0.7100
  • 1,000 $0.6600
$0.6600 / $1.6900 Buy Now
DISTI # IRFD024PBF
EBV Elektronik MOSFET NCHANNEL 60V (Alt: IRFD024PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 1.8A 100m10V1.5A 1.3W 4V 1 N-channel HVMDIP-4 MOSFETs ROHS 6
  • 1 $2.0896
  • 10 $1.8210
  • 30 $1.6521
  • 100 $1.4061
  • 500 $1.3277
  • 1,000 $1.2930
$1.2930 / $2.0896 Buy Now

Part Details for IRFD024PBF

IRFD024PBF CAD Models

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IRFD024PBF Part Data Attributes

Parametric Data
IRFD024PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD024PBF Vishay Intertechnologies Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, DIP-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code DIP
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 91 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD024PBF

This table gives cross-reference parts and alternative options found for IRFD024PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD024PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIHFD024 Vishay Siliconix Check for Price TRANSISTOR 2.5 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, HVMDIP-4, FET General Purpose Power IRFD024PBF vs SIHFD024
Part Number Manufacturer Composite Price Description Compare
IRFD024PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4 IRFD024PBF vs IRFD024PBF
IRFD024 International Rectifier Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 IRFD024PBF vs IRFD024
IRFD024 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4 IRFD024PBF vs IRFD024
IRFD024 Vishay Siliconix Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 IRFD024PBF vs IRFD024
IRFD024PBF International Rectifier Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 IRFD024PBF vs IRFD024PBF

IRFD024PBF Related Parts

IRFD024PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFD024PBF is -55°C to 175°C.

  • Yes, the IRFD024PBF is a fast-switching MOSFET with a rise time of 10ns and a fall time of 12ns.

  • The maximum drain-source voltage rating for the IRFD024PBF is 200V.

  • Yes, the IRFD024PBF is suitable for high-frequency applications up to 1MHz due to its low gate charge and fast switching times.

  • Yes, the IRFD024PBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

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