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Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFB4321PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1436961
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Farnell | MOSFET, N, 150V, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each | 1112 |
|
$1.6604 / $3.6794 | Buy Now |
DISTI #
IRFB4321PBF-ND
|
DigiKey | MOSFET N-CH 150V 85A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
1965 In Stock |
|
$1.5415 / $3.2600 | Buy Now |
DISTI #
IRFB4321PBF
|
Avnet Americas | Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4321PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$1.0080 / $1.0878 | Buy Now |
DISTI #
E02:0323_00011004
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Arrow Electronics | Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2515 | Europe - 4076 |
|
$1.4678 / $3.1318 | Buy Now |
DISTI #
V36:1790_13889745
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Arrow Electronics | Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2439 | Americas - 785 |
|
$1.4931 / $1.5082 | Buy Now |
DISTI #
70017935
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RS | MOSFET, N Ch., 150V, 83A, 15 MOHM, 71 NC QG, TO-220AB, Pb-Free Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$4.7600 / $5.5900 | RFQ |
DISTI #
87108887
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Verical | Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 21 Package Multiple: 1 Date Code: 2152 | Americas - 4694 |
|
$1.7100 / $3.0300 | Buy Now |
DISTI #
88765676
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Verical | Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2515 | Americas - 4076 |
|
$1.4662 / $3.1078 | Buy Now |
DISTI #
87993518
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Verical | Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2425 | Americas - 2000 |
|
$1.3464 | Buy Now |
DISTI #
85988799
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Verical | Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 242 Package Multiple: 1 Date Code: 2201 | Americas - 1250 |
|
$1.3125 / $1.5500 | Buy Now |
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IRFB4321PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4321PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 82 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 250 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 350 W | |
Pulsed Drain Current-Max (IDM) | 330 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFB4321PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4321PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFB4321GPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRFB4321PBF vs IRFB4321GPBF |
IRFB4321PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | IRFB4321PBF vs IRFB4321PBF |
The maximum operating temperature range for the IRFB4321PBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
The recommended gate drive voltage for the IRFB4321PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRFB4321PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency range and follow proper PCB design and layout guidelines.
Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.