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Part Details for IRFB4310ZPBF by Infineon Technologies AG
Results Overview of IRFB4310ZPBF by Infineon Technologies AG
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFB4310ZPBF Information
IRFB4310ZPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB4310ZPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
61M6835
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Newark | Mosfet, N, 100V, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:127A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0056Ohm, Rds(On) Test Voltage Vgs:20V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRFB4310ZPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1360 |
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$1.3700 / $3.2500 | Buy Now |
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DISTI #
IRFB4310ZPBF-ND
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DigiKey | MOSFET N-CH 100V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
2398 In Stock |
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$1.6289 / $3.5000 | Buy Now |
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DISTI #
IRFB4310ZPBF
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Avnet Americas | Trans MOSFET N-CH 100V 127A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4310ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.9696 / $1.0192 | Buy Now |
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DISTI #
E02:0323_00010992
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Arrow Electronics | Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2424 | Europe - 4955 |
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$1.3274 / $2.7653 | Buy Now |
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DISTI #
V36:1790_13889740
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Arrow Electronics | Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2311 | Americas - 130 |
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$1.3012 / $1.4582 | Buy Now |
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Future Electronics | Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 6950Tube |
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$1.0700 / $1.1300 | Buy Now |
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Future Electronics | Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
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$1.0100 / $1.0900 | Buy Now |
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DISTI #
82431514
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Verical | Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2424 | Americas - 4955 |
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$1.3139 / $2.7379 | Buy Now |
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DISTI #
69267826
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Verical | Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 23 Package Multiple: 1 Date Code: 2310 | Americas - 1890 |
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$1.4800 / $2.2200 | Buy Now |
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DISTI #
83716500
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Verical | Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 26 Package Multiple: 1 Date Code: 2401 | Americas - 1000 |
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$2.3128 | Buy Now |
Part Details for IRFB4310ZPBF
IRFB4310ZPBF CAD Models
IRFB4310ZPBF Part Data Attributes
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IRFB4310ZPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4310ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 560 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB4310ZPBF
This table gives cross-reference parts and alternative options found for IRFB4310ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4310ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFB4310ZGPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | IRFB4310ZPBF vs IRFB4310ZGPBF |
| IRFB4310ZPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRFB4310ZPBF vs IRFB4310ZPBF |
IRFB4310ZPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFB4310ZPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
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The recommended gate drive voltage for the IRFB4310ZPBF is between 10V and 15V, with a maximum of 20V.
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Yes, the IRFB4310ZPBF can be used in high-frequency switching applications, but ensure proper gate drive and layout to minimize switching losses and ringing.
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Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.