Part Details for IRF9510SPBF by Vishay Siliconix
Results Overview of IRF9510SPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF9510SPBF Information
IRF9510SPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF9510SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9510SPBF-ND
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DigiKey | MOSFET P-CH 100V 4A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Tube |
906 In Stock |
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$0.8237 / $2.3700 | Buy Now |
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ComSIT USA | Power MOSFET Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for IRF9510SPBF
IRF9510SPBF CAD Models
IRF9510SPBF Part Data Attributes
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IRF9510SPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF9510SPBF
Vishay Siliconix
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9510SPBF
This table gives cross-reference parts and alternative options found for IRF9510SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF9510SPBF | Vishay Intertechnologies | $0.5517 | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510SPBF vs IRF9510SPBF |
| IRF9510STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510SPBF vs IRF9510STRLPBF |
| IRF9510STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510SPBF vs IRF9510STRL |
| IRF9510S | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510SPBF vs IRF9510S |
| IRF9510SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF9510SPBF vs IRF9510SPBF |
IRF9510SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9510SPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation accordingly to ensure reliable operation.
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To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) within the recommended range of 2V to 4V. Additionally, ensure the drain-source voltage (Vds) is within the specified maximum rating of 100V.
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For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink if necessary. Follow the recommended land pattern and layout guidelines in the datasheet.
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Handle the device with ESD-safe materials and tools. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposed die. If you must handle the device, discharge any static electricity from your body before handling.
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Follow the recommended soldering conditions: peak temperature of 260°C, soldering time of 10 seconds, and a soldering iron temperature of 350°C. Use a solder with a melting point above 217°C to ensure reliable joints.