| Harris Semiconductor |
Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.4750 / $4.0000
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| International Rectifier |
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.4875 / $2.7972
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| Samsung Semiconductor |
Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$0.7750 / $4.0000
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| New Jersey Semiconductor Products Inc |
TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,4A I(D),TO-220AB |
$1.3000 / $4.0000
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| Vishay Huntington |
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET | MOSFET P-CH 100V 4A TO-220AB |
$0.5013 / $0.7508
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| Thomson Consumer Electronics |
Transistor |
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| Vishay Siliconix |
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| Vishay Intertechnologies |
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN |
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| Intersil Corporation |
3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Rochester Electronics LLC |
3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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