Part Details for IRF9510 by Vishay Intertechnologies
Results Overview of IRF9510 by Vishay Intertechnologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Automotive
IRF9510 Information
IRF9510 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF9510
IRF9510 CAD Models
IRF9510 Part Data Attributes
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IRF9510
Vishay Intertechnologies
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Datasheet
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IRF9510
Vishay Intertechnologies
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9510
This table gives cross-reference parts and alternative options found for IRF9510. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF9510 | Intersil Corporation | Check for Price | 3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF9510 vs IRF9510 |
IRF9510 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF9510 is not explicitly stated in the datasheet, but it can be determined by consulting the SOA curves provided in the application notes or by contacting Vishay's technical support. Generally, the SOA is limited by the device's voltage and current ratings, as well as its thermal characteristics.
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To ensure proper thermal management, the IRF9510 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power loss, taking into account the device's power rating, operating frequency, and ambient temperature. Additionally, the device's thermal pad should be soldered to the heat sink using a thermally conductive material.
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The recommended gate drive voltage for the IRF9510 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve the device's switching performance, but it also increases the risk of gate oxide damage.
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Yes, the IRF9510 can be used in high-frequency switching applications up to 1MHz, but it requires careful consideration of the device's switching losses, parasitic inductance, and layout. The device's datasheet provides guidance on high-frequency operation, and additional information can be found in Vishay's application notes.
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To protect the IRF9510 from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should also be stored in an anti-static package, and its pins should be shorted together during storage to prevent static buildup.