Part Details for IRF740PBF by Vishay Siliconix
Results Overview of IRF740PBF by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
IRF740PBF Information
IRF740PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF740PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF740PBF-ND
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DigiKey | MOSFET N-CH 400V 10A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
4345 In Stock |
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$1.1238 / $1.8200 | Buy Now |
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DISTI #
70459406
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RS | MOSFET N-CH 400V 10A TO-220AB Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$1.8100 / $2.1300 | RFQ |
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Bristol Electronics | 17 |
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RFQ | ||
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New Advantage Corporation | Single N-Channel 400 V 550 mO 63 nC Power Mosfet - TO-220-3 (TO-220AB) RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 12300 |
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$1.2500 / $1.3500 | Buy Now |
Part Details for IRF740PBF
IRF740PBF CAD Models
IRF740PBF Part Data Attributes
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IRF740PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF740PBF
Vishay Siliconix
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF740PBF
This table gives cross-reference parts and alternative options found for IRF740PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF740PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF740 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740PBF vs IRF740 |
| IRF740 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF740PBF vs IRF740 |
| IRF740 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | IRF740PBF vs IRF740 |
| IRF740 | STMicroelectronics | Check for Price | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF740PBF vs IRF740 |
| IRF740 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF740PBF vs IRF740 |
| IRF740 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740PBF vs IRF740 |
| IRF740 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740PBF vs IRF740 |
IRF740PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF740PBF is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 400V.
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The maximum current rating for the IRF740PBF is 10A.
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To protect the IRF740PBF from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and add a current sense resistor to monitor the current. Additionally, consider using a fuse or a current limiter to prevent excessive current.
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For optimal performance, use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the high-frequency traces short and away from the power plane. Use a Kelvin connection for the gate-source voltage to minimize inductance.