| Samsung Semiconductor |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| International Rectifier |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$1.8700 / $9.3000
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| Vishay Siliconix |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$1.7000 / $3.4000
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| Harris Semiconductor |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$2.4000 / $3.8400
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| onsemi |
IRF740 |
$3.2010 / $4.3650
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| New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB |
$4.2420 / $12.1200
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| Samsung Electro-Mechanics |
POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET |
$1.2000 / $3.2000
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| STMicroelectronics |
10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN |
$2.0000 / $3.4000
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| Vishay Intertechnologies |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN |
$1.6800 / $2.2400
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| SGS Semiconductor Ltd |
INSTOCK |
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| Renesas Electronics Corporation |
INSTOCK |
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| Foshan Blue Rocket Electronics Co Ltd |
400V 10A 0.4410V5A 134W 2V 1 N-channel TO-220 MOSFETs ROHS |
$0.1830 / $0.3674
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| Minos |
400V 10A 0.510V5A 100W 4V 1 N-channel TO-220 MOSFETs ROHS |
$0.1582 / $0.3105
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| Hongxing Electrical Ltd |
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| Vishay Huntington |
MOSFET N-CH 400V 10A TO220AB |
$0.4213 / $0.6318
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,10A I(D),TO-220AB |
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| National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,10A I(D),TO-220AB |
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| FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Inchange Semiconductor Company Ltd |
Transistor |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Texas Instruments |
IRF740 |
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| Intersil Corporation |
10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| General Electric Solid State |
Transistor |
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| TT Electronics Power and Hybrid / Semelab Limited |
10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| Motorola Mobility LLC |
10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Rochester Electronics LLC |
10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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