Part Details for IRF740 by onsemi
Results Overview of IRF740 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
IRF740 Information
IRF740 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF740
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 16 |
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$3.2010 / $4.3650 | Buy Now |
Part Details for IRF740
IRF740 CAD Models
IRF740 Part Data Attributes
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IRF740
onsemi
Buy Now
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IRF740
onsemi
IRF740
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 10 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for IRF740
This table gives cross-reference parts and alternative options found for IRF740. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF740, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF743 | Rochester Electronics LLC | Check for Price | 8A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF740 vs IRF743 |
| IRF740 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,10A I(D),TO-220AB | IRF740 vs IRF740 |
| IRF740 | Texas Instruments | Check for Price | IRF740 | IRF740 vs IRF740 |
| RFP7N35 | Rochester Electronics LLC | Check for Price | 7A, 350V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF740 vs RFP7N35 |
| IRF741 | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740 vs IRF741 |
| IRF740-010 | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740 vs IRF740-010 |
| IRF743 | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740 vs IRF743 |
| IRF742 | Rochester Electronics LLC | Check for Price | 8A, 400V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF740 vs IRF742 |
| IRF740-009 | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740 vs IRF740-009 |
| IRF740-006 | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF740 vs IRF740-006 |
IRF740 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF740 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, the SOA is typically limited by the device's maximum voltage rating, maximum current rating, and thermal limitations. For the IRF740, the maximum voltage rating is 400V, and the maximum current rating is 10A. Engineers should consult the datasheet and application notes for more information on SOA and thermal design considerations.
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The junction-to-case thermal resistance (RθJC) for the IRF740 is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance values. The datasheet provides the junction-to-ambient thermal resistance (RθJA) value, which is 62°C/W. To calculate RθJC, engineers can use the following formula: RθJC = RθJA - RθCS, where RθCS is the case-to-sink thermal resistance. For a typical TO-220 package, RθCS is around 0.5°C/W. Therefore, RθJC ≈ 62°C/W - 0.5°C/W = 61.5°C/W.
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The recommended gate drive voltage for the IRF740 is not explicitly stated in the datasheet, but it is typically in the range of 10V to 15V. A higher gate drive voltage can improve the device's switching performance, but it may also increase the risk of gate oxide breakdown. Engineers should consult the datasheet and application notes for more information on gate drive requirements and recommendations.
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The IRF740 is a general-purpose MOSFET, and its high-frequency performance is not optimized. While it can be used in switching applications, its switching frequency is limited by its internal capacitances and gate resistance. The datasheet does not provide explicit information on the device's high-frequency performance, but engineers can estimate its performance based on the device's capacitance values and gate resistance. For high-frequency switching applications, engineers may want to consider using a MOSFET specifically designed for high-frequency operation.
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To ensure the IRF740 is properly biased for linear operation, engineers should consult the datasheet and application notes for information on the device's biasing requirements. In general, the IRF740 requires a gate-source voltage (VGS) of around 4V to 5V to operate in the linear region. Engineers should also ensure that the device's drain-source voltage (VDS) is within the recommended operating range, and that the device is properly heat-sinked to prevent thermal runaway.