Part Details for IRF730 by Intersil Corporation
Results Overview of IRF730 by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF730 Information
IRF730 by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF730
IRF730 CAD Models
IRF730 Part Data Attributes
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IRF730
Intersil Corporation
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Datasheet
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IRF730
Intersil Corporation
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 80 ns | |
| Turn-on Time-Max (ton) | 46 ns |
Alternate Parts for IRF730
This table gives cross-reference parts and alternative options found for IRF730. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF730, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF730 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF730 vs IRF730 |
| BUZ60 | Intersil Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-220AB | IRF730 vs BUZ60 |
| MTP5N35 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF730 vs MTP5N35 |
| MTP5N40E | Semiconductor Technology Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF730 vs MTP5N40E |
| IRF730 | NXP Semiconductors | Check for Price | 7.2A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | IRF730 vs IRF730 |
IRF730 Frequently Asked Questions (FAQ)
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The IRF730 can operate from -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
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To ensure the IRF730 is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current (IG) should be sufficient to charge the gate capacitance quickly.
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The maximum continuous drain current (ID) rating for the IRF730 is 5A, but it can handle higher currents for short periods of time. The maximum pulsed drain current (IDM) is 15A.
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To protect the IRF730 from overvoltage, a voltage clamp or a zener diode can be used to limit the maximum voltage applied to the drain-source pins. A voltage rating of 400V or higher is recommended.
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The typical turn-on time (ton) for the IRF730 is around 10-20 ns, and the typical turn-off time (toff) is around 20-30 ns. However, these times can vary depending on the gate drive circuit and operating conditions.