Part Details for IRF640 by onsemi
Results Overview of IRF640 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640 Information
IRF640 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 3720 |
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$1.5150 / $3.0300 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 56 |
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$2.0200 / $3.0300 | Buy Now |
Part Details for IRF640
IRF640 CAD Models
IRF640 Part Data Attributes
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IRF640
onsemi
Buy Now
Datasheet
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Compare Parts:
IRF640
onsemi
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 4 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220AB | |
| Package Description | CASE 221A-06, 4 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 221A-06 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640
This table gives cross-reference parts and alternative options found for IRF640. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640PBF | Vishay Intertechnologies | $0.9726 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | IRF640 vs IRF640PBF |
| IRF640 | STMicroelectronics | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF640 vs IRF640 |
| IRF640,127 | NXP Semiconductors | Check for Price | IRF640 | IRF640 vs IRF640,127 |
| IRF640 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF640 vs IRF640 |
| IRF640 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF640 vs IRF640 |
| IRF640 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF640 vs IRF640 |
| IRF640 | NXP Semiconductors | Check for Price | 16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | IRF640 vs IRF640 |
IRF640 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF640 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's operation to a maximum junction temperature of 150°C and a maximum drain-source voltage of 200V.
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To ensure the IRF640 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive current should be sufficient to charge the gate capacitance quickly. A good rule of thumb is to use a gate drive voltage of 12V to 15V and a gate drive current of at least 1A to 2A.
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The maximum allowable drain-source voltage (Vds) for the IRF640 is 200V, as specified in the datasheet. However, it's recommended to derate the voltage to 180V to 190V to ensure reliable operation and to account for voltage spikes and transients.
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The IRF640 has a high input capacitance (Ciss) of around 3500pF. To handle this, use a low-impedance gate drive circuit with a high-current capability to quickly charge and discharge the gate capacitance. Additionally, consider using a gate driver IC with a high-current output stage and a low-output impedance.
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The thermal resistance of the IRF640's package (RθJA) is around 62°C/W for the TO-220 package and 40°C/W for the TO-263 package. This value represents the thermal resistance from the junction to the ambient air, and it's used to estimate the device's junction temperature based on the ambient temperature and power dissipation.