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Part Details for IRF640 by STMicroelectronics
Results Overview of IRF640 by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640 Information
IRF640 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 360 |
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$1.8685 / $3.0300 | Buy Now |
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Cytech Systems Limited | MOSFET N-CH 200V 18A TO220AB | 5000 |
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RFQ | |
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Win Source Electronics | N-channel TrenchMOS transistor | MOSFET N-CH 200V 18A TO-220 | 31947 |
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$0.3667 / $0.4736 | Buy Now |
Part Details for IRF640
IRF640 CAD Models
IRF640 Part Data Attributes
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IRF640
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF640
STMicroelectronics
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 190 ns | |
| Turn-on Time-Max (ton) | 185 ns |
Alternate Parts for IRF640
This table gives cross-reference parts and alternative options found for IRF640. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640PBF | Vishay Intertechnologies | $0.9726 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | IRF640 vs IRF640PBF |
| IRF640,127 | NXP Semiconductors | Check for Price | IRF640 | IRF640 vs IRF640,127 |
| IRF640 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF640 vs IRF640 |
| IRF640 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF640 vs IRF640 |
| IRF640 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF640 vs IRF640 |
| IRF640 | NXP Semiconductors | Check for Price | 16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | IRF640 vs IRF640 |
| IRF640 | onsemi | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 4 PIN | IRF640 vs IRF640 |
IRF640 Frequently Asked Questions (FAQ)
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The IRF640 can operate safely between -55°C and 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure the IRF640 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly.
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The maximum continuous drain current (ID) rating for the IRF640 is 18A, but this can be increased to 36A for short pulses (e.g., 10ms).
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To protect the IRF640 from overvoltage, a voltage clamp or a zener diode can be used to limit the maximum voltage across the drain-source terminals.
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The recommended gate resistor value for the IRF640 is between 10Ω and 100Ω, depending on the specific application and switching frequency.