Part Details for IRF640 by Motorola Semiconductor Products
Results Overview of IRF640 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF640 Information
IRF640 by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 200 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 490 |
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$1.6500 / $4.0000 | Buy Now |
Part Details for IRF640
IRF640 CAD Models
IRF640 Part Data Attributes
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IRF640
Motorola Semiconductor Products
Buy Now
Datasheet
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IRF640
Motorola Semiconductor Products
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 300 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 90 ns |
IRF640 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF640 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF640 can be calculated using the formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides the thermal resistance values for the device, but the actual RθJC value may vary depending on the specific application and cooling conditions.
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The recommended gate drive voltage for the IRF640 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve the device's switching performance, but it may also increase the power consumption and EMI emissions.
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Yes, the IRF640 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The datasheet provides the device's switching characteristics, and the user should ensure that the application's switching frequency is within the device's recommended operating range.
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To protect the IRF640 from overvoltage and overcurrent conditions, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, the user should ensure that the device is operated within its recommended voltage and current ratings, and that the application's power supply is stable and reliable.