Part Details for IRF640 by International Rectifier
Results Overview of IRF640 by International Rectifier
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640 Information
IRF640 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2800 |
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RFQ | ||
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Bristol Electronics | 54 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 3458 |
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$1.5150 / $3.0300 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 492 |
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$1.6500 / $4.0000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 480 |
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$1.8685 / $3.0300 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 323 |
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$1.8685 / $3.0300 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 64 |
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$0.0900 / $0.2000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 34 |
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$1.4100 / $2.3500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 30 |
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$2.2220 / $3.0300 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 16 |
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$5.9230 / $8.8845 | Buy Now |
Part Details for IRF640
IRF640 CAD Models
IRF640 Part Data Attributes
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IRF640
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF640
International Rectifier
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640
This table gives cross-reference parts and alternative options found for IRF640. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | IRF640 vs IRF640 |
| IRF640 | Motorola Mobility LLC | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF640 vs IRF640 |
| IRF640-001 | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF640 vs IRF640-001 |
| IRF640 | Microsemi Corporation | Check for Price | IRF640 | IRF640 vs IRF640 |
IRF640 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF640 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. A general guideline is to ensure that the device operates within the boundaries of the maximum voltage (Vds) and current (Ids) ratings, and that the power dissipation is within the maximum allowed power rating (Pd).
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To ensure the IRF640 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide sufficient current to charge the gate capacitance quickly. A gate resistor (Rg) value of 10-20 ohms is typically recommended to limit the gate current and prevent oscillations.
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The maximum junction temperature (Tj) for the IRF640 is 175°C. It's essential to ensure that the device operates within this temperature range to prevent thermal runaway and ensure reliable operation.
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Yes, the IRF640 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive is capable of providing a fast switching signal. Additionally, the layout and PCB design should be optimized to minimize parasitic inductance and capacitance.
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To protect the IRF640 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and limit excessive current.