Part Details for IRF531 by International Rectifier
Results Overview of IRF531 by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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IRF531 Information
IRF531 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF531
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2500 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 2000 |
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$2.4900 / $4.9800 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 252 |
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$2.0150 / $4.6500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 9 |
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$2.4900 / $4.9800 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 1 |
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$13.6431 | Buy Now |
Part Details for IRF531
IRF531 CAD Models
IRF531 Part Data Attributes
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IRF531
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF531
International Rectifier
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF531
This table gives cross-reference parts and alternative options found for IRF531. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF531, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF532 | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF531 vs IRF532 |
IRF531 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF531 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. A general guideline is to ensure that the device operates within the recommended voltage and current limits, and to avoid operating in the linear region for extended periods.
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To ensure the IRF531 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide sufficient current to charge the gate capacitance quickly. A gate resistor value between 10Ω to 100Ω is recommended to limit the gate current and prevent ringing.
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The maximum junction temperature (Tj) for the IRF531 is 175°C. It's essential to ensure that the device operates within this temperature range to prevent thermal runaway and ensure reliable operation.
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Yes, the IRF531 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive is capable of providing a fast switching signal. Additionally, the PCB layout and component selection should be optimized to minimize parasitic inductance and capacitance.
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To protect the IRF531 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.